A new device structure of polysilicon thin film transistor, Halo LDD P-Si TFT, has been proposed. The Halo structure device can restrain the SCE effectively, and improve the device performance greatly with good doping distribution in the Halo region.
该文提出了多晶硅薄膜晶体管的一种Halo LDD新结构，Halo LDD结构能够有效地抑制短沟道效应，合理的Halo区掺杂分布会极大地改善小尺寸器件性能。
参考来源 - Halo LDD P·2,447,543篇论文数据，部分数据来源于NoteExpress
Key challenges on CMOS scaling down into nanometer regime are discussed, such as power supply and threshold voltage, short-channel effect, quantum effect, random doping distribution and wire delay.
本论文着重论述未来CMOS进入纳米尺寸的关键挑战，如：电源电压和阈值电压减小、短沟效应、量子效应、杂质数起伏以及互连线延迟等影响。
A series of general formulae of impurity concentration distribution along the ingot after point-doping zone melting has been derived.
得到了点掺杂区熔后杂质沿锭长分布的一系列普遍公式。
Moreover, The paper sums up the present situation of study on pressure distribution and doping gas, etc.
也从阶梯面的压力分布、掺气特点等方面概述了国内外对阶梯坝水力特性的研究现状。
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